Elpida EBJ10UE8BAFA-AE-E 1GB vs G Skill Intl F4-2666C19-8GNT 8GB

总分

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

总分

G Skill Intl F4-2666C19-8GNT 8GB

G Skill Intl F4-2666C19-8GNT 8GB

差异规格评论

差异

Elpida EBJ10UE8BAFA-AE-E 1GB

需要考虑的原因
Elpida EBJ10UE8BAFA-AE-E 1GB

报告一个错误

G Skill Intl F4-2666C19-8GNT 8GB

需要考虑的原因
G Skill Intl F4-2666C19-8GNT 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 65

左右 -110% 更低的延时
更快的读取速度，GB/s

16.7 6.1

测试中的平均数值
更快的写入速度，GB/s

13.6 4.2

测试中的平均数值
更高的内存带宽，mbps

21300 8500

左右 2.51 更高的带宽

规格

完整的技术规格清单

Elpida EBJ10UE8BAFA-AE-E 1GB

G Skill Intl F4-2666C19-8GNT 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

65 31
读取速度，GB/s

6.1 16.7
写入速度，GB/s

4.2 13.6
内存带宽，mbps

8500 21300

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1066 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

985 3199

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS8G4D240FSB.M16FBD 8GB

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Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

G Skill Intl F4-2666C19-8GNT 8GB

G Skill Intl F4-2666C19-8GNT 8GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Team Group Inc. TEAMGROUP-D4-3600 4GB

Team Group Inc. TEAMGROUP-D4-3600 4GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

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Kingmax Semiconductor GSJF62F-DA---------- 4GB

Kingmax Semiconductor GSJF62F-DA---------- 4GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Crucial Technology CT8G4SFD824A.C16FDD2 8GB

Crucial Technology CT8G4SFD824A.C16FDD2 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Crucial Technology BL16G32C16U4W.M8FB1 16GB

Crucial Technology BL16G32C16U4W.M8FB1 16GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Crucial Technology CT8G4DFS8266.C8FN 8GB

Crucial Technology CT8G4DFS8266.C8FN 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Micron Technology V-GeN D4V16GL24A8R 16GB

Micron Technology V-GeN D4V16GL24A8R 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

SK Hynix HMA851S6DJR6N-VK 4GB

SK Hynix HMA851S6DJR6N-VK 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-2400C16-8GFX 8GB

G Skill Intl F4-2400C16-8GFX 8GB