Elpida EBJ10UE8BAFA-AE-E 1GB vs G Skill Intl F4-4000C19-16GTRG 16GB

总分

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

总分

G Skill Intl F4-4000C19-16GTRG 16GB

G Skill Intl F4-4000C19-16GTRG 16GB

差异规格评论

差异

Elpida EBJ10UE8BAFA-AE-E 1GB

需要考虑的原因
Elpida EBJ10UE8BAFA-AE-E 1GB

报告一个错误

G Skill Intl F4-4000C19-16GTRG 16GB

需要考虑的原因
G Skill Intl F4-4000C19-16GTRG 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 65

左右 -171% 更低的延时
更快的读取速度，GB/s

19.4 6.1

测试中的平均数值
更快的写入速度，GB/s

18.9 4.2

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Elpida EBJ10UE8BAFA-AE-E 1GB

G Skill Intl F4-4000C19-16GTRG 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

65 24
读取速度，GB/s

6.1 19.4
写入速度，GB/s

4.2 18.9
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

985 4219

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Kingston 9905625-096.A00G 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingston 9905744-077.A00G 16GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Samsung M393A1G40EB1-CPB 8GB

Samsung M393A1G40EB1-CPB 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB

Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB

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Samsung M4 70T5663QZ3-CE6 2GB

SK Hynix HMAA2GS6AJR8N-XN 16GB

SK Hynix HMAA2GS6AJR8N-XN 16GB