Elpida EBJ10UE8BAFA-AE-E 1GB vs InnoDisk Corporation 16GB

总分

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

总分

InnoDisk Corporation 16GB

InnoDisk Corporation 16GB

差异规格评论

差异

Elpida EBJ10UE8BAFA-AE-E 1GB

需要考虑的原因
Elpida EBJ10UE8BAFA-AE-E 1GB

报告一个错误

InnoDisk Corporation 16GB

需要考虑的原因
InnoDisk Corporation 16GB

报告一个错误

低于PassMark测试中的延时，ns

38 65

左右 -71% 更低的延时
更快的读取速度，GB/s

7.7 6.1

测试中的平均数值
更快的写入速度，GB/s

8.2 4.2

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Elpida EBJ10UE8BAFA-AE-E 1GB

InnoDisk Corporation 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

65 38
读取速度，GB/s

6.1 7.7
写入速度，GB/s

4.2 8.2
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

985 2163

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Elpida EBJ10UE8BAFA-AE-E 1GB

InnoDisk Corporation 16GB

InnoDisk Corporation 16GB

Samsung M3 78T2863QZS-CF7 1GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Crucial Technology CT8G4DFS8266.M8FH 8GB

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Samsung 1600 CL10 Series 8GB

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Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Crucial Technology BLS16G4S240FSD.16FD 16GB

Crucial Technology BLS16G4S240FSD.16FD 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

SK Hynix HMA41GR7MFR8N-TFT1 8GB

SK Hynix HMA41GR7MFR8N-TFT1 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB