Elpida EBJ10UE8BAFA-AE-E 1GB vs Kingston MSI26D4S9S8ME-8 8GB

总分

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

总分

Kingston MSI26D4S9S8ME-8 8GB

Kingston MSI26D4S9S8ME-8 8GB

差异规格评论

差异

Elpida EBJ10UE8BAFA-AE-E 1GB

需要考虑的原因
Elpida EBJ10UE8BAFA-AE-E 1GB

报告一个错误

Kingston MSI26D4S9S8ME-8 8GB

需要考虑的原因
Kingston MSI26D4S9S8ME-8 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 65

左右 -81% 更低的延时
更快的读取速度，GB/s

15.8 6.1

测试中的平均数值
更快的写入速度，GB/s

12.6 4.2

测试中的平均数值
更高的内存带宽，mbps

21300 8500

左右 2.51 更高的带宽

规格

完整的技术规格清单

Elpida EBJ10UE8BAFA-AE-E 1GB

Kingston MSI26D4S9S8ME-8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

65 36
读取速度，GB/s

6.1 15.8
写入速度，GB/s

4.2 12.6
内存带宽，mbps

8500 21300

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1066 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

985 2835

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-4000C14-16GTZR 16GB

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Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

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Samsung M471B5273CH0-CH9 4GB

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Apacer Technology 78.C2GFP.C700B 8GB

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Kingston 99U5474-038.A00LF 4GB

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A-DATA Technology AO2P21FC4R1-BRFS 4GB

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Kingston KVR533D2N4 512MB

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Kingston 99U5471-054.A00LF 8GB

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Kingston 99U5471-066.A00LF 8GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

G Skill Intl F4-3200C15-8GTZSW 8GB

G Skill Intl F4-3200C15-8GTZSW 8GB

Nanya Technology M2Y2G64TU8HD5B-AC 2GB

Nanya Technology M2Y2G64TU8HD5B-AC 2GB

A-DATA Technology AM1P24HC4R1-BUNS 4GB

A-DATA Technology AM1P24HC4R1-BUNS 4GB

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

Samsung M378A2K43DB1-CVF 16GB

Samsung M378A2K43DB1-CVF 16GB