SK Hynix DDR2 800 2G 2GB vs G Skill Intl F4-3200C15-8GTZSW 8GB

总分

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分

G Skill Intl F4-3200C15-8GTZSW 8GB

G Skill Intl F4-3200C15-8GTZSW 8GB

差异规格评论

差异

SK Hynix DDR2 800 2G 2GB

需要考虑的原因
SK Hynix DDR2 800 2G 2GB

报告一个错误

更快的读取速度，GB/s

2 18.4

测试中的平均数值

G Skill Intl F4-3200C15-8GTZSW 8GB

需要考虑的原因
G Skill Intl F4-3200C15-8GTZSW 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 77

左右 -221% 更低的延时
更快的写入速度，GB/s

15.4 1,884.0

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix DDR2 800 2G 2GB

G Skill Intl F4-3200C15-8GTZSW 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 24
读取速度，GB/s

2,936.9 18.4
写入速度，GB/s

1,884.0 15.4
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

564 3562

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Corsair CMK16GX4M2E4000C19 8GB

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Samsung M3 78T2953EZ3-CF7 1GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

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