STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Inmos + 256MB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Inmos + 256MB

Inmos + 256MB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 11.5

测试中的平均数值

Inmos + 256MB

需要考虑的原因
Inmos + 256MB

报告一个错误

低于PassMark测试中的延时，ns

30 63

左右 -110% 更低的延时
更快的写入速度，GB/s

9.1 1,447.3

测试中的平均数值
更高的内存带宽，mbps

16800 5300

左右 3.17 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Inmos + 256MB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 30
读取速度，GB/s

3,231.0 11.5
写入速度，GB/s

1,447.3 9.1
内存带宽，mbps

5300 16800

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-16800, TBD1 V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 667 MHz no data
排名PassMark (越多越好)

478 2318

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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