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Elpida EBJ17RG4EFWA-DJ-F 16GB
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
比较
Elpida EBJ17RG4EFWA-DJ-F 16GB vs Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
总分
Elpida EBJ17RG4EFWA-DJ-F 16GB
总分
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
差异
规格
评论
差异
需要考虑的原因
Elpida EBJ17RG4EFWA-DJ-F 16GB
报告一个错误
需要考虑的原因
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
报告一个错误
低于PassMark测试中的延时,ns
32
54
左右 -69% 更低的延时
更快的读取速度,GB/s
19.9
9.4
测试中的平均数值
更快的写入速度,GB/s
14.9
6.7
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Elpida EBJ17RG4EFWA-DJ-F 16GB
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
54
32
读取速度,GB/s
9.4
19.9
写入速度,GB/s
6.7
14.9
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1929
3372
Elpida EBJ17RG4EFWA-DJ-F 16GB RAM的比较
Elpida EBJ17RG4EAFD-DJ-F 16GB
Team Group Inc. TEAMGROUP-UD4-3200 8GB
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Essencore Limited IM48GU88A30-FGGHMB 8GB
Samsung M3 78T2863EHS-CF7 1GB
Corsair CMD64GX4M4A2666C15 16GB
Kingston 9965525-144.A00LF 8GB
Crucial Technology CT32G4SFD832A.C16FB 32GB
Samsung M393B2G70BH0-CK0 16GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600
A-DATA Technology DQVE1908 512MB
Crucial Technology CT8G4DFS8213.C8FBD1 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Kingston X3XCFP-HYA 8GB
Kingston KVR533D2N4 512MB
Crucial Technology BLT8G4D26BFT4K.C8FD 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Crucial Technology CT16G4DFRA266.C8FE 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 16ATF2G64AZ-3G2E1 16GB
Kingston 9905584-016.A00LF 4GB
G Skill Intl F4-3200C15-8GTZKY 8GB
Team Group Inc. UD5-6400 16GB
V-GEN D4S4GL32A16TS 4GB
Samsung M378B5173BH0-CH9 4GB
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology CB8GU2400.C8D 8GB
Kingston ACR256X64D3S1333C9 2GB
Kingston 99U5625-015.A00G 16GB
报告一个错误
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Bug description
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