Elpida EBJ21UE8BDF0-DJ-F 2GB vs Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

总分

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

总分

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

差异规格评论

差异

Elpida EBJ21UE8BDF0-DJ-F 2GB

需要考虑的原因
Elpida EBJ21UE8BDF0-DJ-F 2GB

报告一个错误

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

需要考虑的原因
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 25

左右 -19% 更低的延时
更快的读取速度，GB/s

18.5 13.8

测试中的平均数值
更快的写入速度，GB/s

14.0 8.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Elpida EBJ21UE8BDF0-DJ-F 2GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 21
读取速度，GB/s

13.8 18.5
写入速度，GB/s

8.2 14.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 12 14 15
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2152 3263

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

G Skill Intl F4-3000C15-4GVSB 4GB

G Skill Intl F4-3000C15-4GVSB 4GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

Kingston 99U5403-465.A00LF 8GB

Kingston 99U5403-465.A00LF 8GB

Corsair CMD16GX4M4C3200C15 4GB

Corsair CMD16GX4M4C3200C15 4GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

G Skill Intl F4-3400C16-16GTZ 16GB

G Skill Intl F4-3400C16-16GTZ 16GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

G Skill Intl F4-3600C16-16GTRGC 16GB

G Skill Intl F4-3600C16-16GTRGC 16GB

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

Kingston KHX2133C14D4/4G 4GB

Kingston KHX2133C14D4/4G 4GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Samsung M471A1K43CBCBCRC 8GB

Samsung M471A1K43CBCBCRC 8GB

Kingston 9905403-437.A01LF 4GB

Kingston 9905403-437.A01LF 4GB

Micron Technology 4ATF51264AZ-3G2J1 4GB

Micron Technology 4ATF51264AZ-3G2J1 4GB

Corsair VSA2GSDS667C4 2GB

Corsair VSA2GSDS667C4 2GB

G Skill Intl F4-2133C15-8GVK 8GB

G Skill Intl F4-2133C15-8GVK 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kingston 9905625-098.A00G 16GB

Kingston 9905625-098.A00G 16GB

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

G Skill Intl F4-3200C16-8GTZRX 8GB

G Skill Intl F4-3200C16-8GTZRX 8GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

InnoDisk Corporation M4S0-AGS1O5IK 16GB

InnoDisk Corporation M4S0-AGS1O5IK 16GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB