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Elpida EBJ21UE8BDF0-DJ-F 2GB
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

Elpida EBJ21UE8BDF0-DJ-F 2GB vs Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

总分
star star star star star
Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

总分
star star star star star
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

差异 规格 评论

差异

Elpida EBJ21UE8BDF0-DJ-F 2GB 需要考虑的原因
Elpida EBJ21UE8BDF0-DJ-F 2GB
报告一个错误
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB 需要考虑的原因
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 25
    左右 -9% 更低的延时
  • 更快的读取速度，GB/s
    16.3 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.8 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Elpida EBJ21UE8BDF0-DJ-F 2GB
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 23
  • 读取速度，GB/s
    13.8 left arrow 16.3
  • 写入速度，GB/s
    8.2 left arrow 10.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2152 left arrow 2763

Elpida EBJ21UE8BDF0-DJ-F 2GB RAM的比较

Kingston ACR256X64D3S1333C9 2GB
Micron Technology CT8G4DFD8213.16FA2 8GB

Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB RAM的比较

A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
内存RAM
Micron Technology 8KTF51264HZ-1G6E1 4GB
Micron Technology 8KTF51264HZ-1G6E1 4GB
G Skill Intl F4-3600C14-8GTRSB 8GB
G Skill Intl F4-3600C14-8GTRSB 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
G Skill Intl F4-4400C16-8GTZR 8GB
G Skill Intl F4-4400C16-8GTZR 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Kingston 9905700-017.A00G 8GB
Kingston 9905700-017.A00G 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Panram International Corporation PUD42400C154GNJW 4GB
Panram International Corporation PUD42400C154GNJW 4GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Kingston KHX3300C16D4/4GX 4GB
Kingston KHX3300C16D4/4GX 4GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
G Skill Intl F4-4400C19-8GTZSW 8GB
G Skill Intl F4-4400C19-8GTZSW 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMD16GX4M4B3200C14 4GB
Corsair CMD16GX4M4B3200C14 4GB
内存RAM
SK Hynix HMA81GS6DJR8N-XN 8GB
SK Hynix HMA81GS6DJR8N-XN 8GB
Crucial Technology CT32G4SFD832A.M16FF 32GB
Crucial Technology CT32G4SFD832A.M16FF 32GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Golden Empire CL16-18-18 D4-3200 8GB
Golden Empire CL16-18-18 D4-3200 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
SK Hynix HMA851U6JJR6N-VK 4GB
SK Hynix HMA851U6JJR6N-VK 4GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology BLS8G4D240FSE.16FBD2 8GB
Crucial Technology BLS8G4D240FSE.16FBD2 8GB
内存RAM