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Elpida EBJ21UE8BDF0-DJ-F 2GB
G Skill Intl F4-3600C14-16GTZR 16GB

Elpida EBJ21UE8BDF0-DJ-F 2GB vs G Skill Intl F4-3600C14-16GTZR 16GB

总分
star star star star star
Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

总分
star star star star star
G Skill Intl F4-3600C14-16GTZR 16GB

G Skill Intl F4-3600C14-16GTZR 16GB

差异 规格 评论

差异

Elpida EBJ21UE8BDF0-DJ-F 2GB 需要考虑的原因
Elpida EBJ21UE8BDF0-DJ-F 2GB
报告一个错误
G Skill Intl F4-3600C14-16GTZR 16GB 需要考虑的原因
G Skill Intl F4-3600C14-16GTZR 16GB
报告一个错误
  • 更快的读取速度，GB/s
    25.6 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    20.7 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Elpida EBJ21UE8BDF0-DJ-F 2GB
G Skill Intl F4-3600C14-16GTZR 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 25
  • 读取速度，GB/s
    13.8 left arrow 25.6
  • 写入速度，GB/s
    8.2 left arrow 20.7
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2152 left arrow 4537

Elpida EBJ21UE8BDF0-DJ-F 2GB RAM的比较

Kingston ACR256X64D3S1333C9 2GB
Micron Technology CT8G4DFD8213.16FA2 8GB

G Skill Intl F4-3600C14-16GTZR 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KHX2800C14D4/8GX 8GB
Kingston KHX2800C14D4/8GX 8GB
V-GEN D4H8GS24A8 8GB
V-GEN D4H8GS24A8 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
G Skill Intl F4-4400C17-16GVK 16GB
G Skill Intl F4-4400C17-16GVK 16GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Samsung M393A2G40EB1-CPB 16GB
Samsung M393A2G40EB1-CPB 16GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
V-Color Technology Inc. TL48G32S8RRGB16 8GB
V-Color Technology Inc. TL48G32S8RRGB16 8GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
A-DATA Technology AO1E34RCTV2-BZWS 32GB
A-DATA Technology AO1E34RCTV2-BZWS 32GB
内存RAM
Crucial Technology CT25664BA1339.M8FK 2GB
Crucial Technology CT25664BA1339.M8FK 2GB
Crucial Technology CT8G4DFD8213.C16FADP 8GB
Crucial Technology CT8G4DFD8213.C16FADP 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 16ATF4G64AZ-2G6B1 32GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Kingston 9905702-137.A00G 8GB
Kingston 9905702-137.A00G 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Corsair CMK32GX4M2A2133C13 16GB
Corsair CMK32GX4M2A2133C13 16GB
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
Crucial Technology CT8G4DFS8266.M8FE 8GB
Crucial Technology CT8G4DFS8266.M8FE 8GB
内存RAM
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Kingston 9905630-025.A00G 8GB
Kingston 9905630-025.A00G 8GB
内存RAM
Ramaxel Technology RMT3020EC58E9F1333 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Micron Technology 18ADF2G72AZ-2G3B1 16GB
Micron Technology 18ADF2G72AZ-2G3B1 16GB
内存RAM