Elpida EBJ21UE8BDF0-DJ-F 2GB vs G Skill Intl F4-4000C17-16GVKB 16GB

总分

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

总分

G Skill Intl F4-4000C17-16GVKB 16GB

G Skill Intl F4-4000C17-16GVKB 16GB

差异规格评论

差异

Elpida EBJ21UE8BDF0-DJ-F 2GB

需要考虑的原因
Elpida EBJ21UE8BDF0-DJ-F 2GB

报告一个错误

低于PassMark测试中的延时，ns

25 27

左右 7% 更低的延时

G Skill Intl F4-4000C17-16GVKB 16GB

需要考虑的原因
G Skill Intl F4-4000C17-16GVKB 16GB

报告一个错误

更快的读取速度，GB/s

22.7 13.8

测试中的平均数值
更快的写入速度，GB/s

18.5 8.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Elpida EBJ21UE8BDF0-DJ-F 2GB

G Skill Intl F4-4000C17-16GVKB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 27
读取速度，GB/s

13.8 22.7
写入速度，GB/s

8.2 18.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2152 4177

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX1600C9D3/8G 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Samsung M3 78T5663RZ3-CE6 2GB

InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

Micron Technology 16ATF2G64HZ-2G3B1 16GB

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Samsung M471B1G73QH0-YK0 8GB

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Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Corsair CM4X16GE2133C13K8 16GB

Corsair CM4X16GE2133C13K8 16GB