Elpida EBJ21UE8BDF0-DJ-F 2GB vs Samsung M378A2G43MX3-CTD 16GB

总分

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

总分

Samsung M378A2G43MX3-CTD 16GB

Samsung M378A2G43MX3-CTD 16GB

差异规格评论

差异

Elpida EBJ21UE8BDF0-DJ-F 2GB

需要考虑的原因
Elpida EBJ21UE8BDF0-DJ-F 2GB

报告一个错误

低于PassMark测试中的延时，ns

25 33

左右 24% 更低的延时

Samsung M378A2G43MX3-CTD 16GB

需要考虑的原因
Samsung M378A2G43MX3-CTD 16GB

报告一个错误

更快的读取速度，GB/s

15.1 13.8

测试中的平均数值
更快的写入速度，GB/s

11.9 8.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Elpida EBJ21UE8BDF0-DJ-F 2GB

Samsung M378A2G43MX3-CTD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 33
读取速度，GB/s

13.8 15.1
写入速度，GB/s

8.2 11.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2152 3224

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMR32GX4M2C3200C16 16GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Micron Technology 16ATF2G64AZ-2G3A1 16GB

Micron Technology 16ATF2G64AZ-2G3A1 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Kingston MSI21D4S15HAG/8G 8GB

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G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

Team Group Inc. TEAMGROUP-SD4-2400 16GB

Team Group Inc. TEAMGROUP-SD4-2400 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

G Skill Intl F4-3600C18-32GTRG 32GB

G Skill Intl F4-3600C18-32GTRG 32GB