Elpida EBJ40EG8BFWB-JS-F 4GB vs G Skill Intl F4-4400C18-8GTRG 8GB

总分

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

总分

G Skill Intl F4-4400C18-8GTRG 8GB

G Skill Intl F4-4400C18-8GTRG 8GB

差异规格评论

差异

Elpida EBJ40EG8BFWB-JS-F 4GB

需要考虑的原因
Elpida EBJ40EG8BFWB-JS-F 4GB

报告一个错误

G Skill Intl F4-4400C18-8GTRG 8GB

需要考虑的原因
G Skill Intl F4-4400C18-8GTRG 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 26

左右 -8% 更低的延时
更快的读取速度，GB/s

19 13.9

测试中的平均数值
更快的写入速度，GB/s

17.1 9.6

测试中的平均数值
更高的内存带宽，mbps

17000 14200

左右 1.2 更高的带宽

规格

完整的技术规格清单

Elpida EBJ40EG8BFWB-JS-F 4GB

G Skill Intl F4-4400C18-8GTRG 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 24
读取速度，GB/s

13.9 19.0
写入速度，GB/s

9.6 17.1
内存带宽，mbps

14200 17000

Other

描述

PC3-14200, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2558 4069

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9965525-018.A00LF 4GB

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Kingston 9905403-156.A00LF 2GB

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Kingston X2YH1K-MIE 16GB

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Crucial Technology BL16G26C16U4B.16FE 16GB

Crucial Technology BL16G26C16U4B.16FE 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Smart Modular SF4641G8CKHI6DFSEG 8GB

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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Transcend Information JM3200HLG-8G 8GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HMAA4GS6CJR8N-XN 32GB

SK Hynix HMAA4GS6CJR8N-XN 32GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Samsung M471A5143EB0-CPB 4GB

Samsung M471A5143EB0-CPB 4GB