G Skill Intl F3-1333C9-4GIS 4GB vs Samsung M471A5143EB0-CPB 4GB

总分

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

总分

Samsung M471A5143EB0-CPB 4GB

Samsung M471A5143EB0-CPB 4GB

差异规格评论

差异

G Skill Intl F3-1333C9-4GIS 4GB

需要考虑的原因
G Skill Intl F3-1333C9-4GIS 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 35

左右 20% 更低的延时

Samsung M471A5143EB0-CPB 4GB

需要考虑的原因
Samsung M471A5143EB0-CPB 4GB

报告一个错误

更快的读取速度，GB/s

13.5 12.4

测试中的平均数值
更快的写入速度，GB/s

10.3 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-1333C9-4GIS 4GB

Samsung M471A5143EB0-CPB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 35
读取速度，GB/s

12.4 13.5
写入速度，GB/s

7.5 10.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2014 2155

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology ADOVE1A0834E 1GB

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Kingston KHX3200C18D4/8G 8GB

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Kingston CBD24D4S7D8ME-16 16GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Micron Technology 36ASF4G72PZ-2G1B1 32GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Corsair CMD64GX4M8X3800C19 8GB

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Samsung M471A1K43EB1-CWE 8GB

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PNY Electronics PNY 2GB

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V-GEN D4S4GL32A16TS 4GB

V-GEN D4S4GL32A16TS 4GB

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G Skill Intl F5-6400J3239G16G 16GB

Samsung M391A2K43BB1-CRC 16GB

Samsung M391A2K43BB1-CRC 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Crucial Technology BLS4G4D26BFSB.8FB 4GB

Crucial Technology BLS4G4D26BFSB.8FB 4GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Corsair CMK32GX4M2D3000C16 16GB

Corsair CMK32GX4M2D3000C16 16GB