Elpida EBJ40EG8BFWB-JS-F 4GB vs Kingston 99U5624-001.A00G 8GB

总分

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

总分

Kingston 99U5624-001.A00G 8GB

Kingston 99U5624-001.A00G 8GB

差异规格评论

差异

Elpida EBJ40EG8BFWB-JS-F 4GB

需要考虑的原因
Elpida EBJ40EG8BFWB-JS-F 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 34

左右 24% 更低的延时

Kingston 99U5624-001.A00G 8GB

需要考虑的原因
Kingston 99U5624-001.A00G 8GB

报告一个错误

更快的读取速度，GB/s

15.8 13.9

测试中的平均数值
更快的写入速度，GB/s

11.6 9.6

测试中的平均数值
更高的内存带宽，mbps

19200 14200

左右 1.35 更高的带宽

规格

完整的技术规格清单

Elpida EBJ40EG8BFWB-JS-F 4GB

Kingston 99U5624-001.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 34
读取速度，GB/s

13.9 15.8
写入速度，GB/s

9.6 11.6
内存带宽，mbps

14200 19200

Other

描述

PC3-14200, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2558 2929

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMSX16GX4M1A2400C16 16GB

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Samsung M378B5173BH0-CH9 4GB

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Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

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Crucial Technology BLE4G4D30AEEA.K8FE 4GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

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Samsung M393A2G40DBD-CP1???? 16GB

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Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Team Group Inc. TEAMGROUP-UD4-3733 8GB

Team Group Inc. TEAMGROUP-UD4-3733 8GB

AMD R534G1601U1S-UO 4GB

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SK Hynix V-GeN D4H4GL30A8TX5 4GB

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Corsair CMK16GX4M4B3333C16 4GB

Corsair CMK16GX4M4B3333C16 4GB