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Elpida EBJ40EG8BFWB-JS-F 4GB
Panram International Corporation W4N2400PS-8G 8GB

Elpida EBJ40EG8BFWB-JS-F 4GB vs Panram International Corporation W4N2400PS-8G 8GB

总分
star star star star star
Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

总分
star star star star star
Panram International Corporation W4N2400PS-8G 8GB

Panram International Corporation W4N2400PS-8G 8GB

差异 规格 评论

差异

Elpida EBJ40EG8BFWB-JS-F 4GB 需要考虑的原因
Elpida EBJ40EG8BFWB-JS-F 4GB
报告一个错误
Panram International Corporation W4N2400PS-8G 8GB 需要考虑的原因
Panram International Corporation W4N2400PS-8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 26
    左右 -13% 更低的延时
  • 更快的读取速度，GB/s
    16.6 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.9 left arrow 9.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 14200
    左右 1.35 更高的带宽

规格

完整的技术规格清单
Elpida EBJ40EG8BFWB-JS-F 4GB
Panram International Corporation W4N2400PS-8G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 23
  • 读取速度，GB/s
    13.9 left arrow 16.6
  • 写入速度，GB/s
    9.6 left arrow 12.9
  • 内存带宽，mbps
    14200 left arrow 19200
Other
  • 描述
    PC3-14200, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    no data left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2558 left arrow 2825

Elpida EBJ40EG8BFWB-JS-F 4GB RAM的比较

Corsair CML4GX3M1A1600C9 4GB
Corsair CML4GX3M2A1600C9 2GB

Panram International Corporation W4N2400PS-8G 8GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Panram International Corporation W4N2400PS-8G 8GB
Panram International Corporation W4N2400PS-8G 8GB
内存RAM
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Kingston 9965426-088.A00LF 4GB
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Kreton Corporation 51624xxxx68x35xxxx 2GB
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Samsung M471A2K43EB1-CTD 16GB
内存RAM
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Samsung M3 78T2863EHS-CF7 1GB
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内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
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内存RAM
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Kingston 9905469-143.A00LF 4GB
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Kingston ACR26D4S9D8ME-16 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
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Crucial Technology CT8G4SFS832A.C8FP 8GB
内存RAM
SK Hynix HMT351R7EFR8C-RD 4GB
SK Hynix HMT351R7EFR8C-RD 4GB
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V-Color Technology Inc. TA48G36S818BN 8GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
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Apacer Technology 78.CAGP7.C7Z0B 8GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Kingston HP26D4S9S8MH-8 8GB
Kingston HP26D4S9S8MH-8 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor GLLH22F-18KCGA------ 16GB
Kingmax Semiconductor GLLH22F-18KCGA------ 16GB
内存RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
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Crucial Technology BL8G32C16S4B.8FE 8GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Mushkin 99[2/7/4]200F 8GB
Mushkin 99[2/7/4]200F 8GB
内存RAM