PNY Electronics PNY 2GB vs Kingston HP32D4U2S1ME-8 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Kingston HP32D4U2S1ME-8 8GB

Kingston HP32D4U2S1ME-8 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 35

左右 23% 更低的延时

Kingston HP32D4U2S1ME-8 8GB

需要考虑的原因
Kingston HP32D4U2S1ME-8 8GB

报告一个错误

更快的读取速度，GB/s

18.6 13.8

测试中的平均数值
更快的写入速度，GB/s

11.9 8.4

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Kingston HP32D4U2S1ME-8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 35
读取速度，GB/s

13.8 18.6
写入速度，GB/s

8.4 11.9
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2274 3029

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-2800C12-8GTXDG 8GB

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Corsair CMK16GX4M2K3600C19 8GB

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Golden Empire CL5-5-5DDR2 1GB

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Panram International Corporation PUD43000C164G2NJK 4GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Micron Technology 8R8F1G64HZ-2G3B1 8GB

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A-DATA Technology DQKD1A08 1GB

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Micron Technology 16ATF2G64HZ-2G3E2 16GB

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G Skill Intl F3-17000CL9-4GBXLD 4GB

Samsung T471A1K43CB1-CRC 8GB

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Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

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SK Hynix HYMP164U64CP6-Y5 512MB

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Kingston XWM8G1-MIE 32GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

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Kingston 9905403-011.A03LF 2GB

Teikon TMA41GU6AFR8N-TFSC 8GB

Teikon TMA41GU6AFR8N-TFSC 8GB