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Elpida EBJ40EG8BFWB-JS-F 4GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
比较
Elpida EBJ40EG8BFWB-JS-F 4GB vs Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
总分
Elpida EBJ40EG8BFWB-JS-F 4GB
总分
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
差异
规格
评论
差异
需要考虑的原因
Elpida EBJ40EG8BFWB-JS-F 4GB
报告一个错误
低于PassMark测试中的延时,ns
26
27
左右 4% 更低的延时
需要考虑的原因
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
报告一个错误
更快的读取速度,GB/s
18.7
13.9
测试中的平均数值
更快的写入速度,GB/s
17.8
9.6
测试中的平均数值
更高的内存带宽,mbps
25600
14200
左右 1.8 更高的带宽
规格
完整的技术规格清单
Elpida EBJ40EG8BFWB-JS-F 4GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
27
读取速度,GB/s
13.9
18.7
写入速度,GB/s
9.6
17.8
内存带宽,mbps
14200
25600
Other
描述
PC3-14200, 1.5V, CAS Supported: 6 7 8 9 10 11 13
PC4-25600, 1.2V, CAS Supported: 13 14 15 16 17 18 19 20 21 22
时序/时钟速度
no data
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2558
3963
Elpida EBJ40EG8BFWB-JS-F 4GB RAM的比较
Corsair CML4GX3M1A1600C9 4GB
Corsair CML4GX3M2A1600C9 2GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CML8GX3M2A1866C9 4GB
Samsung M471A4G43AB1-CWE 32GB
Kingston 99P5474-037.A00LF 4GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
Samsung M393B1K70QB0-CK0 8GB
Samsung M378A5143TB2-CTD 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Samsung M3 91T2953GZ3-CF7 1GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
A-DATA Technology DOVF1B163G2G 2GB
V-GEN D4M8GL26A8TS6 8GB
Samsung M471B5673FH0-CF8 2GB
Nanya Technology NT8GA64D88CX3S-JR 8GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-4000C17-8GVKB 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology AO2P24HCST2-BTVS 16GB
Corsair CM3X8GA2400C11Y2R 8GB
Chun Well Technology Holding Limited D4U1636181DC 16GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Crucial Technology CT8G4SFS832A.M8FRS 8GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Micron Technology 16ATF2G64HZ-2G6J1 16GB
Samsung M393B2G70BH0-YK0 16GB
Chun Well Technology Holding Limited D4U1636181DC 16GB
报告一个错误
×
Bug description
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