Elpida EBJ40UG8EFU0-GN-F 4GB vs G Skill Intl F4-3000C15-8GVKB 8GB

总分

Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

总分

G Skill Intl F4-3000C15-8GVKB 8GB

G Skill Intl F4-3000C15-8GVKB 8GB

差异规格评论

差异

Elpida EBJ40UG8EFU0-GN-F 4GB

需要考虑的原因
Elpida EBJ40UG8EFU0-GN-F 4GB

报告一个错误

G Skill Intl F4-3000C15-8GVKB 8GB

需要考虑的原因
G Skill Intl F4-3000C15-8GVKB 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 43

左右 -54% 更低的延时
更快的读取速度，GB/s

18.3 12.7

测试中的平均数值
更快的写入速度，GB/s

14.0 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Elpida EBJ40UG8EFU0-GN-F 4GB

G Skill Intl F4-3000C15-8GVKB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 28
读取速度，GB/s

12.7 18.3
写入速度，GB/s

8.0 14.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2057 3409

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Samsung M378B5773DH0-CH9 2GB

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Corsair CMK32GX4M4K4000C19 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Micron Technology 8ATF1G64HZ-2G3E1 8GB

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A-DATA Technology AO1P26KC8T1-BXPS 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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JUHOR JHD3000U1908JG 8GB

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Samsung M471B1G73QH0-YK0 8GB

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Mushkin MRA4S300GJJM16G 16GB

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Mushkin MR[A/B]4U346GJJM8G 8GB

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Samsung M471B5773DH0-CH9 2GB

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Crucial Technology CT8G4SFRA266.C4FE 8GB

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Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

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Kingston 99U5584-004.A00LF 4GB

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Wilk Elektronik S.A. GR2133S464L15/8G 8GB

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Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

G Skill Intl F4-4266C19-8GTZA 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Kingston CBD24D4S7D8MB-16 16GB

Kingston CBD24D4S7D8MB-16 16GB