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Crucial Technology CT51264BF160B.M16F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB

Crucial Technology CT51264BF160B.M16F 4GB vs Elpida EBJ40UG8EFU0-GN-F 4GB

总分
star star star star star
Crucial Technology CT51264BF160B.M16F 4GB

Crucial Technology CT51264BF160B.M16F 4GB

总分
star star star star star
Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

差异 规格 评论

差异

Crucial Technology CT51264BF160B.M16F 4GB 需要考虑的原因
Crucial Technology CT51264BF160B.M16F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 43
    左右 35% 更低的延时
  • 更快的写入速度，GB/s
    8.2 left arrow 8.0
    测试中的平均数值
Elpida EBJ40UG8EFU0-GN-F 4GB 需要考虑的原因
Elpida EBJ40UG8EFU0-GN-F 4GB
报告一个错误
  • 更快的读取速度，GB/s
    12.7 left arrow 11.8
    测试中的平均数值

规格

完整的技术规格清单
Crucial Technology CT51264BF160B.M16F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    28 left arrow 43
  • 读取速度，GB/s
    11.8 left arrow 12.7
  • 写入速度，GB/s
    8.2 left arrow 8.0
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1854 left arrow 2057

Crucial Technology CT51264BF160B.M16F 4GB RAM的比较

Samsung M471B5173QH0-YK0 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT451S6AFR8A-PB 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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