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Elpida EBJ40UG8EFU0-GN-F 4GB
Kingston KHX2400C15S4/8G 8GB

Elpida EBJ40UG8EFU0-GN-F 4GB vs Kingston KHX2400C15S4/8G 8GB

总分
star star star star star
Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

总分
star star star star star
Kingston KHX2400C15S4/8G 8GB

Kingston KHX2400C15S4/8G 8GB

差异 规格 评论

差异

Elpida EBJ40UG8EFU0-GN-F 4GB 需要考虑的原因
Elpida EBJ40UG8EFU0-GN-F 4GB
报告一个错误
Kingston KHX2400C15S4/8G 8GB 需要考虑的原因
Kingston KHX2400C15S4/8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 43
    左右 -34% 更低的延时
  • 更快的读取速度，GB/s
    15.7 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.7 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Elpida EBJ40UG8EFU0-GN-F 4GB
Kingston KHX2400C15S4/8G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 32
  • 读取速度，GB/s
    12.7 left arrow 15.7
  • 写入速度，GB/s
    8.0 left arrow 12.7
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2057 left arrow 2824

Elpida EBJ40UG8EFU0-GN-F 4GB RAM的比较

Crucial Technology CT51264BF160B.M16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451S6AFR8A-PB 4GB

Kingston KHX2400C15S4/8G 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Transcend Information JM3200HLE-16G 16GB
Transcend Information JM3200HLE-16G 16GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Crucial Technology BLS4G4D240FSA.8FARG 4GB
Crucial Technology BLS4G4D240FSA.8FARG 4GB
内存RAM
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内存RAM
Nanya Technology M2F4G64CB8HB9N-CG 4GB
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内存RAM
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Mushkin MR[A/B]4U320GJJM8G 8GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Crucial Technology BLS4G4S240FSD.8FBD 4GB
Crucial Technology BLS4G4S240FSD.8FBD 4GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
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Kingston X5H5PW-MIB 8GB
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内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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G Skill Intl F4-2800C15-16GRKD 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Apacer Technology GD2.11173T.001 4GB
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内存RAM
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Samsung M393B2G70BH0-YK0 16GB
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内存RAM
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内存RAM
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Kingston 9905403-444.A00LF 4GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
内存RAM