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Elpida EBJ40UG8EFU0-GN-F 4GB
Samsung M378A1K43EB2-CWE 8GB

Elpida EBJ40UG8EFU0-GN-F 4GB vs Samsung M378A1K43EB2-CWE 8GB

总分
star star star star star
Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

总分
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

差异 规格 评论

差异

Elpida EBJ40UG8EFU0-GN-F 4GB 需要考虑的原因
Elpida EBJ40UG8EFU0-GN-F 4GB
报告一个错误
Samsung M378A1K43EB2-CWE 8GB 需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 43
    左右 -30% 更低的延时
  • 更快的读取速度，GB/s
    17.6 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Elpida EBJ40UG8EFU0-GN-F 4GB
Samsung M378A1K43EB2-CWE 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 33
  • 读取速度，GB/s
    12.7 left arrow 17.6
  • 写入速度，GB/s
    8.0 left arrow 12.0
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2057 left arrow 2910

Elpida EBJ40UG8EFU0-GN-F 4GB RAM的比较

Crucial Technology CT51264BF160B.M16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451S6AFR8A-PB 4GB

Samsung M378A1K43EB2-CWE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-3000C15-8GRRB 8GB
G Skill Intl F4-3000C15-8GRRB 8GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
内存RAM
Ramaxel Technology RMT1970ED48E8F1066 2GB
Ramaxel Technology RMT1970ED48E8F1066 2GB
Elpida EBJ41UF8BCS0-DJ-F 4GB
Elpida EBJ41UF8BCS0-DJ-F 4GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Kingston KHX2666C16D4/4G 4GB
Kingston KHX2666C16D4/4G 4GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Crucial Technology CB8GU2400.C8D 8GB
Crucial Technology CB8GU2400.C8D 8GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
内存RAM
Crucial Technology CT51264BA160B.C16F 4GB
Crucial Technology CT51264BA160B.C16F 4GB
G Skill Intl F4-5333C22-8GTRG 8GB
G Skill Intl F4-5333C22-8GTRG 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Apacer Technology GD2.1527WE.001 8GB
Apacer Technology GD2.1527WE.001 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Corsair CMW16GX4M2C3600C18 8GB
Corsair CMW16GX4M2C3600C18 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
G Skill Intl F4-3200C16-32GVK 32GB
G Skill Intl F4-3200C16-32GVK 32GB
内存RAM
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Kingston 9905630-033.A00G 16GB
Kingston 9905630-033.A00G 16GB
内存RAM