Elpida EBJ41UF8BCS0-DJ-F 4GB vs Samsung M471B5273BH1-CF8 4GB

总分

Elpida EBJ41UF8BCS0-DJ-F 4GB

Elpida EBJ41UF8BCS0-DJ-F 4GB

总分

Samsung M471B5273BH1-CF8 4GB

Samsung M471B5273BH1-CF8 4GB

差异规格评论

差异

Elpida EBJ41UF8BCS0-DJ-F 4GB

需要考虑的原因
Elpida EBJ41UF8BCS0-DJ-F 4GB

报告一个错误

更快的读取速度，GB/s

10.6 7.6

测试中的平均数值
更高的内存带宽，mbps

10600 8500

左右 1.25% 更高的带宽

Samsung M471B5273BH1-CF8 4GB

需要考虑的原因
Samsung M471B5273BH1-CF8 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 39

左右 -8% 更低的延时
更快的写入速度，GB/s

6.6 6.4

测试中的平均数值

规格

完整的技术规格清单

Elpida EBJ41UF8BCS0-DJ-F 4GB

Samsung M471B5273BH1-CF8 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

39 36
读取速度，GB/s

10.6 7.6
写入速度，GB/s

6.4 6.6
内存带宽，mbps

10600 8500

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC3-8500, 1.5V, CAS Supported: 6 7 8
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1066 MHz
排名PassMark (越多越好)

1723 867

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMT41GU7MFR8A-H9 8GB

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SK Hynix HMA84GR7JJR4N-VK 32GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A

Corsair CMU32GX4M2C3000C15 16GB

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Essencore Limited KD48GU88C-26N1600 8GB

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Micron Technology 8ATF1G64HZ-2G2G1 8GB

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Corsair CM4X16GE2133C15S2 16GB

Samsung M393B1G70BH0-YK0 8GB

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