Samsung M471B5273BH1-CF8 4GB vs Samsung M471B5673EH1-CF8 2GB

总分

Samsung M471B5273BH1-CF8 4GB

Samsung M471B5273BH1-CF8 4GB

总分

Samsung M471B5673EH1-CF8 2GB

Samsung M471B5673EH1-CF8 2GB

差异规格评论

差异

Samsung M471B5273BH1-CF8 4GB

需要考虑的原因
Samsung M471B5273BH1-CF8 4GB

报告一个错误

更快的写入速度，GB/s

6.6 6.2

测试中的平均数值

Samsung M471B5673EH1-CF8 2GB

需要考虑的原因
Samsung M471B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

29 36

左右 -24% 更低的延时
更快的读取速度，GB/s

9.4 7.6

测试中的平均数值

规格

完整的技术规格清单

Samsung M471B5273BH1-CF8 4GB

Samsung M471B5673EH1-CF8 2GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

36 29
读取速度，GB/s

7.6 9.4
写入速度，GB/s

6.6 6.2
内存带宽，mbps

8500 8500

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC3-8500, 1.5V, CAS Supported: 6 7 8
时序/时钟速度

7-7-7-20 / 1066 MHz 7-7-7-20 / 1066 MHz
排名PassMark (越多越好)

867 1207

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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TwinMOS 8DHE3MN8-HATP 2GB

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Corsair MK16GX44A2666C16 4GB

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Crucial Technology CT32G4SFD832A.M16FB 32GB

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Samsung M378B5673EH1-CF8 2GB

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Mushkin 99[2/7/4]200[F/T] 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Crucial Technology BLE16G4D32AEEA.K16FB 16GB

Crucial Technology BLE16G4D32AEEA.K16FB 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Kingston 9905625-097.A00G 16GB

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AMD AE34G2139U2 4GB

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G Skill Intl F4-3600C19-8GVRB 8GB