Elpida EBJ41UF8BDU5-GN-F 4GB vs G Skill Intl F4-2666C19-8GVR 8GB

总分

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

总分

G Skill Intl F4-2666C19-8GVR 8GB

G Skill Intl F4-2666C19-8GVR 8GB

差异规格评论

差异

Elpida EBJ41UF8BDU5-GN-F 4GB

需要考虑的原因
Elpida EBJ41UF8BDU5-GN-F 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 28

左右 14% 更低的延时

G Skill Intl F4-2666C19-8GVR 8GB

需要考虑的原因
G Skill Intl F4-2666C19-8GVR 8GB

报告一个错误

更快的读取速度，GB/s

17 14.4

测试中的平均数值
更快的写入速度，GB/s

13.0 9.4

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Elpida EBJ41UF8BDU5-GN-F 4GB

G Skill Intl F4-2666C19-8GVR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

24 28
读取速度，GB/s

14.4 17.0
写入速度，GB/s

9.4 13.0
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2267 3211

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Elpida EBJ41UF8BDU5-GN-F 4GB

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Corsair CMW16GX4M2C3200C16 8GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Samsung M378A1K43EB2-CWE 8GB

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Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

G Skill Intl F4-4000C18-8GTRS 8GB

G Skill Intl F4-4000C18-8GTRS 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

AMD R744G2606U1S 4GB

AMD R744G2606U1S 4GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

SK Hynix HMA41GU7AFR8N-TF 8GB

SK Hynix HMA41GU7AFR8N-TF 8GB