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Corsair CMD16GX3M2A1866C9 8GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
比较
Corsair CMD16GX3M2A1866C9 8GB vs ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
总分
Corsair CMD16GX3M2A1866C9 8GB
总分
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
差异
规格
评论
差异
需要考虑的原因
Corsair CMD16GX3M2A1866C9 8GB
报告一个错误
低于PassMark测试中的延时,ns
34
37
左右 8% 更低的延时
需要考虑的原因
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
报告一个错误
更快的读取速度,GB/s
21.4
16
测试中的平均数值
更快的写入速度,GB/s
14.3
10.3
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Corsair CMD16GX3M2A1866C9 8GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
34
37
读取速度,GB/s
16.0
21.4
写入速度,GB/s
10.3
14.3
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2782
3448
Corsair CMD16GX3M2A1866C9 8GB RAM的比较
Corsair CMD16GX3M2A1600C9 8GB
Kingston KKN2NM-MIE 4GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB RAM的比较
Corsair CMK64GX4M4K3733C17 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Corsair CMD16GX3M2A1866C9 8GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-4000C19-16GTZSW 16GB
G Skill Intl F3-1866C8-8GTX 8GB
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Kingston KHX1600C9S3L/8G 8GB
Kingston 9965600-011.A01G 16GB
Kingston 9905403-011.A03LF 2GB
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB
SK Hynix HMT151R7TFR4C-H9 4GB
G Skill Intl F4-4133C19-8GTZRF 8GB
报告一个错误
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Bug description
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