Elpida EBJ41UF8BDU5-GN-F 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

总分

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

差异规格评论

差异

Elpida EBJ41UF8BDU5-GN-F 4GB

需要考虑的原因
Elpida EBJ41UF8BDU5-GN-F 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 25

左右 4% 更低的延时

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

报告一个错误

更快的读取速度，GB/s

15.3 14.4

测试中的平均数值
更快的写入速度，GB/s

12.7 9.4

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Elpida EBJ41UF8BDU5-GN-F 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

24 25
读取速度，GB/s

14.4 15.3
写入速度，GB/s

9.4 12.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2267 2704

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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V-GEN D4S4GL32A16TS 4GB

V-GEN D4S4GL32A16TS 4GB

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Kingston 99P5471-002.A00LF 2GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

Elpida EBJ40UG8BBU0-GN-F 4GB

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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G Skill Intl F4-3200C14-16GTZDCB 16GB