Elpida EBJ41UF8BDU5-GN-F 4GB vs InnoDisk Corporation M4S0-8GS1NCIK 8GB

总分

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

总分

InnoDisk Corporation M4S0-8GS1NCIK 8GB

InnoDisk Corporation M4S0-8GS1NCIK 8GB

差异规格评论

差异

Elpida EBJ41UF8BDU5-GN-F 4GB

需要考虑的原因
Elpida EBJ41UF8BDU5-GN-F 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 30

左右 20% 更低的延时
更快的写入速度，GB/s

9.4 7.6

测试中的平均数值

InnoDisk Corporation M4S0-8GS1NCIK 8GB

需要考虑的原因
InnoDisk Corporation M4S0-8GS1NCIK 8GB

报告一个错误

更快的读取速度，GB/s

15.5 14.4

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Elpida EBJ41UF8BDU5-GN-F 4GB

InnoDisk Corporation M4S0-8GS1NCIK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

24 30
读取速度，GB/s

14.4 15.5
写入速度，GB/s

9.4 7.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2267 2208

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Elpida EBJ41UF8BDU5-GN-F 4GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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PNY Electronics PNY 2GB

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Corsair CMK4GX4M1A2400C14 4GB

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Crucial Technology BL16G32C16U4BL.16FE 16GB

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A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Kingston KHYXPX-MID 8GB

Kingston KHYXPX-MID 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

G Skill Intl F4-2400C17-4GFX 4GB

G Skill Intl F4-2400C17-4GFX 4GB

Kingston KHX318C10FR/8G 8GB

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A-DATA Technology AO1P32NC8W1-BDZS 8GB

A-DATA Technology AO1P32NC8W1-BDZS 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Corsair CMR16GX4M2Z2933C16 8GB

Corsair CMR16GX4M2Z2933C16 8GB