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Elpida EBJ41UF8BDU5-GN-F 4GB
Kingmax Semiconductor GZNG43F-18---------- 8GB

Elpida EBJ41UF8BDU5-GN-F 4GB vs Kingmax Semiconductor GZNG43F-18---------- 8GB

总分
star star star star star
Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

总分
star star star star star
Kingmax Semiconductor GZNG43F-18---------- 8GB

Kingmax Semiconductor GZNG43F-18---------- 8GB

差异 规格 评论

差异

Elpida EBJ41UF8BDU5-GN-F 4GB 需要考虑的原因
Elpida EBJ41UF8BDU5-GN-F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 62
    左右 61% 更低的延时
  • 更快的写入速度，GB/s
    9.4 left arrow 9.3
    测试中的平均数值
Kingmax Semiconductor GZNG43F-18---------- 8GB 需要考虑的原因
Kingmax Semiconductor GZNG43F-18---------- 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.8 left arrow 14.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Elpida EBJ41UF8BDU5-GN-F 4GB
Kingmax Semiconductor GZNG43F-18---------- 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 62
  • 读取速度，GB/s
    14.4 left arrow 16.8
  • 写入速度，GB/s
    9.4 left arrow 9.3
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2267 left arrow 2138

Elpida EBJ41UF8BDU5-GN-F 4GB RAM的比较

SK Hynix HMT451S6AFR8A-PB 4GB
Hewlett-Packard 7EH64AA# 8GB

Kingmax Semiconductor GZNG43F-18---------- 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
takeMS International AG TMS2GB264D083805EV 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Kingmax Semiconductor GZNG43F-18---------- 8GB
Kingmax Semiconductor GZNG43F-18---------- 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Ramaxel Technology RMSA3270ME86H9F-2666 4GB
Ramaxel Technology RMSA3270ME86H9F-2666 4GB
内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
Kingston KHX3000C15D4/4GX 4GB
Kingston KHX3000C15D4/4GX 4GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
A Force Manufacturing Ltd. UD-01G64V2133P 8GB
A Force Manufacturing Ltd. UD-01G64V2133P 8GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston 9905702-184.A00G 8GB
Kingston 9905702-184.A00G 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Golden Empire CL15-15-15 D4-2400 4GB
Golden Empire CL15-15-15 D4-2400 4GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Gold Key Technology Co Ltd NMUD416E82-3000D 16GB
Gold Key Technology Co Ltd NMUD416E82-3000D 16GB
内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
Panram International Corporation W4U2133PS-8G 8GB
Panram International Corporation W4U2133PS-8G 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3000C15-8GRKB 8GB
G Skill Intl F4-3000C15-8GRKB 8GB
内存RAM
Micron Technology 16KTF1G64HZ-1G9E2 8GB
Micron Technology 16KTF1G64HZ-1G9E2 8GB
G Skill Intl F4-3200C16-8GRKB 8GB
G Skill Intl F4-3200C16-8GRKB 8GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-4000C19-16GTZR 16GB
G Skill Intl F4-4000C19-16GTZR 16GB
内存RAM