Elpida EBJ41UF8BDU5-GN-F 4GB vs Kingston 99U5702-101.A00G 8GB

总分

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

总分

Kingston 99U5702-101.A00G 8GB

Kingston 99U5702-101.A00G 8GB

差异规格评论

差异

Elpida EBJ41UF8BDU5-GN-F 4GB

需要考虑的原因
Elpida EBJ41UF8BDU5-GN-F 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 30

左右 20% 更低的延时
更快的读取速度，GB/s

14.4 13.7

测试中的平均数值
更快的写入速度，GB/s

9.4 9.1

测试中的平均数值

Kingston 99U5702-101.A00G 8GB

需要考虑的原因
Kingston 99U5702-101.A00G 8GB

报告一个错误

更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Elpida EBJ41UF8BDU5-GN-F 4GB

Kingston 99U5702-101.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

24 30
读取速度，GB/s

14.4 13.7
写入速度，GB/s

9.4 9.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2267 2611

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471A1K43EB1-CWE 8GB

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SK Hynix HMA451S6AFR8N-TF 4GB

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Kingston 9965516-112.A00LF 16GB

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G Skill Intl F4-3200C22-16GRS 16GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

G Skill Intl F4-4400C16-8GVK 8GB

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SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Kingmax Semiconductor GSJF62F-DA---------- 4GB

Kingmax Semiconductor GSJF62F-DA---------- 4GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

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Kingston 9905663-030.A00G 16GB