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Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
比较
Samsung M378B5773CH0-CH9 2GB vs Samsung M378B5773CH0-CH9 2GB
总分
Samsung M378B5773CH0-CH9 2GB
总分
Samsung M378B5773CH0-CH9 2GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378B5773CH0-CH9 2GB
报告一个错误
需要考虑的原因
Samsung M378B5773CH0-CH9 2GB
报告一个错误
规格
完整的技术规格清单
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
主要特点
存储器类型
DDR3
DDR3
PassMark中的延时,ns
39
39
读取速度,GB/s
12.8
12.8
写入速度,GB/s
7.4
7.4
内存带宽,mbps
10600
10600
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度
7-7-7-20 / 1333 MHz
7-7-7-20 / 1333 MHz
排名PassMark (越多越好)
1770
1770
Samsung M378B5773CH0-CH9 2GB RAM的比较
Kingston 99U5458-001.A00LF 2GB
Wilk Elektronik S.A. GR3200D464L22/16G 16GB
Samsung M378B5773CH0-CH9 2GB RAM的比较
Kingston 99U5458-001.A00LF 2GB
Wilk Elektronik S.A. GR3200D464L22/16G 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Essencore Limited KD48GU88C-26N1600 8GB
Kingston 9905624-025.A00G 8GB
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Elpida EBJ40EG8BFWB-JS-F 4GB
SK Hynix HMA81GR7AFR8N-UH 8GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT8G4DFS8266.M8FE 8GB
Kingston 99U5471-012.A00LF 4GB
Kingston KF3000C15D4/8GX 8GB
Kingston KHX16LC9/8GX 8GB
Patriot Memory (PDP Systems) PSD44G266682 4GB
Samsung M3 78T2863QZS-CF7 1GB
Apacer Technology 78.D1GMM.AU10B 16GB
Kingston K1N7HK-ELC 2GB
Corsair CM4B8G1J3000K16W4 8GB
Corsair CMX4GX3M2A1600C9 2GB
Corsair CM4B16G7L2666A16K2-O 16GB
Kingston 99U5428-063.A00LF 8GB
Kingston 9965669-018.A00G 16GB
Kingston 9905403-437.A01LF 4GB
Kingston 9965589-024.D01G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4SFD8213.C16FBD 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Kingston 9965596-016.B01G 8GB
Kingston 9905458-017.A01LF 4GB
Kllisre M378A5143EB2-CRC 4GB
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