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Elpida EBJ41UF8BDU5-GN-F 4GB
SK Hynix HMA851S6CJR6N-UH 4GB
比较
Elpida EBJ41UF8BDU5-GN-F 4GB vs SK Hynix HMA851S6CJR6N-UH 4GB
总分
Elpida EBJ41UF8BDU5-GN-F 4GB
总分
SK Hynix HMA851S6CJR6N-UH 4GB
差异
规格
评论
差异
需要考虑的原因
Elpida EBJ41UF8BDU5-GN-F 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
100
左右 76% 更低的延时
更快的写入速度,GB/s
9.4
8.1
测试中的平均数值
需要考虑的原因
SK Hynix HMA851S6CJR6N-UH 4GB
报告一个错误
更快的读取速度,GB/s
15.2
14.4
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Elpida EBJ41UF8BDU5-GN-F 4GB
SK Hynix HMA851S6CJR6N-UH 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
24
100
读取速度,GB/s
14.4
15.2
写入速度,GB/s
9.4
8.1
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2267
1479
Elpida EBJ41UF8BDU5-GN-F 4GB RAM的比较
SK Hynix HMT451S6AFR8A-PB 4GB
Hewlett-Packard 7EH64AA# 8GB
SK Hynix HMA851S6CJR6N-UH 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5584-004.A00LF 4GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
Kingston 9965525-155.A00LF 8GB
Patriot Memory (PDP Systems) PSD416G26662S 16GB
Kingston 9905471-006.A00LF 4GB
Gold Key Technology Co Ltd NMSO480E82-3200E 8GB
Samsung M378B5273DH0-CK0 4GB
Samsung M378B5773DH0-CH9 2GB
Kingston 9965525-144.A00LF 8GB
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
Samsung M3 78T2863QZS-CF7 1GB
Apacer Technology 78.CAGRN.40C0B 8GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
AMD AE34G1601U1 4GB
Corsair CMD16GX4M2B2400C10 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AO1E34RCSV1-BD7S 16GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Samsung M393A2G40EB2-CTD 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingmax Semiconductor GZNG43F-18---------- 8GB
Samsung M3 78T2863QZS-CF7 1GB
Crucial Technology BLE4G4D32AEEA.K8FE 4GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Panram International Corporation M424016 4GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
报告一个错误
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Bug description
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