Elpida EBJ41UF8BDU5-GN-F 4GB vs Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

总分

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

总分

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

差异规格评论

差异

Elpida EBJ41UF8BDU5-GN-F 4GB

需要考虑的原因
Elpida EBJ41UF8BDU5-GN-F 4GB

报告一个错误

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 24

左右 -4% 更低的延时
更快的读取速度，GB/s

19.6 14.4

测试中的平均数值
更快的写入速度，GB/s

18.8 9.4

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Elpida EBJ41UF8BDU5-GN-F 4GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

24 23
读取速度，GB/s

14.4 19.6
写入速度，GB/s

9.4 18.8
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2267 4095

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Crucial Technology BLS4G4D240FSC.M8FADG 4GB

Crucial Technology BLS4G4D240FSC.M8FADG 4GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Kingston 9965589-037.D00G 8GB

Kingston 9965589-037.D00G 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 9ASF1G72PZ-2G3A1 8GB

Micron Technology 9ASF1G72PZ-2G3A1 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

G Skill Intl F4-3600C16-16GTRSC 16GB

G Skill Intl F4-3600C16-16GTRSC 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-2400C17-4GIS 4GB

G Skill Intl F4-2400C17-4GIS 4GB

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

Crucial Technology BLS4G4D240FSB.8FAR 4GB

Crucial Technology BLS4G4D240FSB.8FAR 4GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

G Skill Intl F4-3200C15-8GVK 8GB

G Skill Intl F4-3200C15-8GVK 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Transcend Information TS2GLH64V1B 16GB

Transcend Information TS2GLH64V1B 16GB

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

V-Color Technology Inc. TA48G30S815GK 8GB

V-Color Technology Inc. TA48G30S815GK 8GB

Patriot Memory (PDP Systems) PSD38G16002 8GB

Patriot Memory (PDP Systems) PSD38G16002 8GB

Crucial Technology CT8G4SFRA32A.M4FE 8GB

Crucial Technology CT8G4SFRA32A.M4FE 8GB

Super Talent STT-WB160CL0901 2GB

Super Talent STT-WB160CL0901 2GB

Kingston HP26D4U6D8ME-16X 16GB

Kingston HP26D4U6D8ME-16X 16GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

G Skill Intl F4-4800C18-8GTRG 8GB

G Skill Intl F4-4800C18-8GTRG 8GB

Kingston 99U5474-023.A00LF 4GB

Kingston 99U5474-023.A00LF 4GB

Crucial Technology CT16G4DFD8266.C16FN 16GB

Crucial Technology CT16G4DFD8266.C16FN 16GB