Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Micron Technology 16ATF4G64HZ-3G2E2 32GB

总分

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分

Micron Technology 16ATF4G64HZ-3G2E2 32GB

Micron Technology 16ATF4G64HZ-3G2E2 32GB

差异规格评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB

需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 43

左右 14% 更低的延时

Micron Technology 16ATF4G64HZ-3G2E2 32GB

需要考虑的原因
Micron Technology 16ATF4G64HZ-3G2E2 32GB

报告一个错误

更快的读取速度，GB/s

15.5 13.9

测试中的平均数值
更快的写入速度，GB/s

11.9 8.6

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Micron Technology 16ATF4G64HZ-3G2E2 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 43
读取速度，GB/s

13.9 15.5
写入速度，GB/s

8.6 11.9
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2395 2864

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Kingston 9965525-140.A00LF 8GB

Apacer Technology 78.CAGPP.ARW0B 8GB

Apacer Technology 78.CAGPP.ARW0B 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Kingston KGTWW1-MIE 4GB

Kingston KGTWW1-MIE 4GB

Samsung M393B5170FH0-CK0 4GB

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Kingmax Semiconductor GSAH22F-18---------- 16GB

Kingmax Semiconductor GSAH22F-18---------- 16GB

Corsair CMSO4GX3M1C1600C11 4GB

Corsair CMSO4GX3M1C1600C11 4GB

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Kingston 99U5474-023.A00LF 4GB

Kingston 99U5474-023.A00LF 4GB

Kingston MSISID4S9S8ME-8 8GB

Kingston MSISID4S9S8ME-8 8GB