Elpida EBJ41UF8BDW0-GN-F 4GB vs Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

总分

Elpida EBJ41UF8BDW0-GN-F 4GB

Elpida EBJ41UF8BDW0-GN-F 4GB

总分

Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

差异规格评论

差异

Elpida EBJ41UF8BDW0-GN-F 4GB

需要考虑的原因
Elpida EBJ41UF8BDW0-GN-F 4GB

报告一个错误

更快的写入速度，GB/s

9.5 9.2

测试中的平均数值

Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 38

左右 -41% 更低的延时
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Elpida EBJ41UF8BDW0-GN-F 4GB

Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 27
读取速度，GB/s

14.4 14.4
写入速度，GB/s

9.5 9.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2361 2575

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Crucial Technology BLE4G4D32AEEA.K8FD 4GB

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Corsair CMK16GX4M4A2666C15 4GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Kingston 9965669-025.A00G 8GB

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Kingston KVR16N11/8-SP 8GB

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Samsung M393B1K70CH0-CH9 8GB

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Micron Technology 16ATF2G64HZ-2G3B2 16GB

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Kingston 9965525-018.A00LF 4GB

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Kingston 9905701-004.A00G 16GB

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Crucial Technology CT8G4SFD8213.C16FDD2 8GB

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SK Hynix HMT151R7TFR4C-H9 4GB

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Teikon TMA451S6AFR8N-TFSC 4GB

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Kingston HX318C10FK/4 4GB

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Kingston MSI24D4S7S7MH-16 16GB

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Samsung M393B1K70QB0-CK0 8GB

SK Hynix GKE800UD102408-2400 8GB

SK Hynix GKE800UD102408-2400 8GB

Kingston ACR16D3LS1KNG/4G 4GB

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G Skill Intl F4-4133C19-8GTZA 8GB

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AMD R534G1601U1S-UO 4GB

Crucial Technology BLT8G4D26AFTA.16FBD 8GB

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Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Kingston MSI24D4U7S8MH-8 8GB

Kingston MSI24D4U7S8MH-8 8GB