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Elpida EBJ81UG8BBU0-GN-F 8GB
Micron Technology AFLD416EH1P 16GB

Elpida EBJ81UG8BBU0-GN-F 8GB vs Micron Technology AFLD416EH1P 16GB

总分
star star star star star
Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

总分
star star star star star
Micron Technology AFLD416EH1P 16GB

Micron Technology AFLD416EH1P 16GB

差异 规格 评论

差异

Elpida EBJ81UG8BBU0-GN-F 8GB 需要考虑的原因
Elpida EBJ81UG8BBU0-GN-F 8GB
报告一个错误
  • 更快的写入速度，GB/s
    9.1 left arrow 6.9
    测试中的平均数值
Micron Technology AFLD416EH1P 16GB 需要考虑的原因
Micron Technology AFLD416EH1P 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 44
    左右 -57% 更低的延时
  • 更快的读取速度，GB/s
    13.7 left arrow 13.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Elpida EBJ81UG8BBU0-GN-F 8GB
Micron Technology AFLD416EH1P 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 28
  • 读取速度，GB/s
    13.2 left arrow 13.7
  • 写入速度，GB/s
    9.1 left arrow 6.9
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2302 left arrow 2312

Elpida EBJ81UG8BBU0-GN-F 8GB RAM的比较

Kingston KVR16N11/8-SP 8GB
Elpida EBJ81UG8EFU0-GNL-F 8GB

Micron Technology AFLD416EH1P 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Apacer Technology D12.2326WH.001 16GB
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Samsung M378A1K43CB2-CTD 8GB
内存RAM
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内存RAM
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