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Elpida EBJ81UG8BBU0-GN-F 8GB
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB vs Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

总分
star star star star star
Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

总分
star star star star star
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

差异 规格 评论

差异

Elpida EBJ81UG8BBU0-GN-F 8GB 需要考虑的原因
Elpida EBJ81UG8BBU0-GN-F 8GB
报告一个错误
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB 需要考虑的原因
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 44
    左右 -100% 更低的延时
  • 更快的读取速度，GB/s
    21 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    19.6 left arrow 9.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Elpida EBJ81UG8BBU0-GN-F 8GB
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 22
  • 读取速度，GB/s
    13.2 left arrow 21.0
  • 写入速度，GB/s
    9.1 left arrow 19.6
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2302 left arrow 4240

Elpida EBJ81UG8BBU0-GN-F 8GB RAM的比较

Kingston KVR16N11/8-SP 8GB
Elpida EBJ81UG8EFU0-GNL-F 8GB

Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Crucial Technology CT102464BF160B.C16 8GB
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Crucial Technology CT102464BD160B.M16 8GB
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内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Crucial Technology BL32G32C16U4W.M16FB1 32GB
Crucial Technology BL32G32C16U4W.M16FB1 32GB
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A-DATA Technology DDR4 2666 8GB
A-DATA Technology DDR4 2666 8GB
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Samsung 1600 CL10 Series 8GB
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Crucial Technology CT8G4SFS824A.M8FB 8GB
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Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
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G Skill Intl F4-3600C17-8GTRG 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology BLS4G4D240FSB.8FBD 4GB
Crucial Technology BLS4G4D240FSB.8FBD 4GB
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
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内存RAM
Strontium EVMT8G1600U86S 8GB
Strontium EVMT8G1600U86S 8GB
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Kingmax Semiconductor GSAH22F-18---------- 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
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Shenzhen Xingmem Technology Corp 16GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
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Kingston KF3200C18D4/8G 8GB
内存RAM
Kingston 99U5428-040.A00LF 4GB
Kingston 99U5428-040.A00LF 4GB
Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB
Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F4-2400C17-4GVR 4GB
G Skill Intl F4-2400C17-4GVR 4GB
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