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Essencore Limited KD48GU88C-26N1600 8GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Essencore Limited KD48GU88C-26N1600 8GB vs ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

总分
star star star star star
Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

总分
star star star star star
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

差异 规格 评论

差异

Essencore Limited KD48GU88C-26N1600 8GB 需要考虑的原因
Essencore Limited KD48GU88C-26N1600 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 37
    左右 51% 更低的延时
  • 更快的写入速度，GB/s
    16.4 left arrow 14.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 19200
    左右 1.11% 更高的带宽
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB 需要考虑的原因
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
报告一个错误
  • 更快的读取速度，GB/s
    21.4 left arrow 20.5
    测试中的平均数值

规格

完整的技术规格清单
Essencore Limited KD48GU88C-26N1600 8GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    18 left arrow 37
  • 读取速度，GB/s
    20.5 left arrow 21.4
  • 写入速度，GB/s
    16.4 left arrow 14.3
  • 内存带宽，mbps
    21300 left arrow 19200
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3530 left arrow 3448

Essencore Limited KD48GU88C-26N1600 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hexon Technology Pte Ltd HEXON 1GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB RAM的比较

Corsair CMK64GX4M4K3733C17 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905624-009.A00G 8GB
Kingston 9905624-009.A00G 8GB
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TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston KHX2933C17D4/8G 8GB
Kingston KHX2933C17D4/8G 8GB
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Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
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Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Apacer Technology 78.DAGNN.4030B 16GB
Apacer Technology 78.DAGNN.4030B 16GB
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Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8G
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Nanya Technology M2F4G64CB8HG5N-CG 4GB
Nanya Technology M2F4G64CB8HG5N-CG 4GB
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Crucial Technology CT8G4SFD8213.C16FHP 8GB
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SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
Kingston 9905702-082.A00G 8GB
Kingston 9905702-082.A00G 8GB
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Kingston ACR256X64D3S1333C9 2GB
Transcend Information TS512MSK64V3N 4GB
Transcend Information TS512MSK64V3N 4GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Netac Technology Co Ltd E40832A 8GB
Netac Technology Co Ltd E40832A 8GB
内存RAM
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD16GX3M2A1866C9 8GB
Kingston 9965640-035.C00G 32GB
Kingston 9965640-035.C00G 32GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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Crucial Technology BLS16G4D240FSC.16FBR 16GB
内存RAM
Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
Corsair CMK16GX4M2Z3600C18 8GB
Corsair CMK16GX4M2Z3600C18 8GB
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Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Corsair CMD32GX4M2B3000C15 16GB
Corsair CMD32GX4M2B3000C15 16GB
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