Essencore Limited KD48GU88C-26N1600 8GB vs Corsair CMW128GX4M4D3600C18 32GB

总分

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

总分

Corsair CMW128GX4M4D3600C18 32GB

Corsair CMW128GX4M4D3600C18 32GB

差异规格评论

差异

Essencore Limited KD48GU88C-26N1600 8GB

需要考虑的原因
Essencore Limited KD48GU88C-26N1600 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 35

左右 49% 更低的延时
更快的读取速度，GB/s

20.5 16.5

测试中的平均数值
更快的写入速度，GB/s

16.4 14.7

测试中的平均数值
更高的内存带宽，mbps

21300 17000

左右 1.25% 更高的带宽

Corsair CMW128GX4M4D3600C18 32GB

需要考虑的原因
Corsair CMW128GX4M4D3600C18 32GB

报告一个错误

规格

完整的技术规格清单

Essencore Limited KD48GU88C-26N1600 8GB

Corsair CMW128GX4M4D3600C18 32GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

18 35
读取速度，GB/s

20.5 16.5
写入速度，GB/s

16.4 14.7
内存带宽，mbps

21300 17000

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3530 3534

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung DDR3 8GB 1600MHz 8GB

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Micron Technology 16ATF4G64HZ-3G2E1 32GB

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Micron Technology 16ATF2G64HZ-3G2E1 16GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Crucial Technology BLS8G4D26BFSBK.8FBD 8GB

Crucial Technology BLS8G4D26BFSBK.8FBD 8GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

A-DATA Technology AE4S240038G17-BHYA 8GB

A-DATA Technology AE4S240038G17-BHYA 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-4500C19-8GTZSWE 8GB

G Skill Intl F4-4500C19-8GTZSWE 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

G Skill Intl F4-3200C16-8GSX 8GB

G Skill Intl F4-3200C16-8GSX 8GB