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Essencore Limited KD48GU88C-26N1600 8GB
Samsung M378A2G43MB1-CTD 16GB

Essencore Limited KD48GU88C-26N1600 8GB vs Samsung M378A2G43MB1-CTD 16GB

总分
star star star star star
Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

总分
star star star star star
Samsung M378A2G43MB1-CTD 16GB

Samsung M378A2G43MB1-CTD 16GB

差异 规格 评论

差异

Essencore Limited KD48GU88C-26N1600 8GB 需要考虑的原因
Essencore Limited KD48GU88C-26N1600 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 43
    左右 58% 更低的延时
  • 更快的读取速度，GB/s
    20.5 left arrow 11.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.4 left arrow 11.2
    测试中的平均数值
Samsung M378A2G43MB1-CTD 16GB 需要考虑的原因
Samsung M378A2G43MB1-CTD 16GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 21300
    左右 1.2 更高的带宽

规格

完整的技术规格清单
Essencore Limited KD48GU88C-26N1600 8GB
Samsung M378A2G43MB1-CTD 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    18 left arrow 43
  • 读取速度，GB/s
    20.5 left arrow 11.6
  • 写入速度，GB/s
    16.4 left arrow 11.2
  • 内存带宽，mbps
    21300 left arrow 25600
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    3530 left arrow 2615

Essencore Limited KD48GU88C-26N1600 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hexon Technology Pte Ltd HEXON 1GB

Samsung M378A2G43MB1-CTD 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Samsung M378A2G43MB1-CTD 16GB
Samsung M378A2G43MB1-CTD 16GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Kingston 9965640-013.A01G 32GB
Kingston 9965640-013.A01G 32GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMK64GX4M8X3600C18 8GB
Corsair CMK64GX4M8X3600C18 8GB
内存RAM
Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
Corsair CM4X16GE2666C18S2 16GB
Corsair CM4X16GE2666C18S2 16GB
内存RAM
Kingston 99U5474-023.A00LF 4GB
Kingston 99U5474-023.A00LF 4GB
G Skill Intl F4-3000C16-8GSXKB 8GB
G Skill Intl F4-3000C16-8GSXKB 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
V-GEN D4H4GS24A8 4GB
V-GEN D4H4GS24A8 4GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology CT4G4DFS824A.C8FBR2 4GB
Crucial Technology CT4G4DFS824A.C8FBR2 4GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT8G4DFD8213.C16FA11 8GB
Crucial Technology CT8G4DFD8213.C16FA11 8GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Ramaxel Technology RMUA5120ME86H9F-2666 4GB
Ramaxel Technology RMUA5120ME86H9F-2666 4GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston K821PJ-MIB 16GB
Kingston K821PJ-MIB 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Kingston 9905743-043.A00G 16GB
Kingston 9905743-043.A00G 16GB
内存RAM
Kingston ACR16D3LS1KBG/8G 8GB
Kingston ACR16D3LS1KBG/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N-VK 32GB
Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N
内存RAM
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
SpecTek Incorporated 16G 2666 CL 19 16GB
SpecTek Incorporated 16G 2666 CL 19 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston HP37D4U1S8ME-16XR 16GB
Kingston HP37D4U1S8ME-16XR 16GB
内存RAM