G Skill Intl F2-5300CL4-1GBSA 1GB vs Corsair CMSX16GX4M2A2666C18 8GB

总分

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

总分

Corsair CMSX16GX4M2A2666C18 8GB

Corsair CMSX16GX4M2A2666C18 8GB

差异规格评论

差异

G Skill Intl F2-5300CL4-1GBSA 1GB

需要考虑的原因
G Skill Intl F2-5300CL4-1GBSA 1GB

报告一个错误

更快的读取速度，GB/s

4 15

测试中的平均数值

Corsair CMSX16GX4M2A2666C18 8GB

需要考虑的原因
Corsair CMSX16GX4M2A2666C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 52

左右 -44% 更低的延时
更快的写入速度，GB/s

11.3 1,479.2

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-5300CL4-1GBSA 1GB

Corsair CMSX16GX4M2A2666C18 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 36
读取速度，GB/s

4,226.4 15.0
写入速度，GB/s

1,479.2 11.3
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 4 PC4-21300, 1.2V, CAS Supported: 11 12 13 14 15 16 18
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

590 2653

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C14-16GTZSW 16GB

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G Skill Intl F4-3600C18-32GTZN 32GB

Crucial Technology CB16GS2666.C8ET 16GB

Crucial Technology CB16GS2666.C8ET 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Samsung M393B2G70BH0-CK0 16GB

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G Skill Intl F4-4266C17-16GVKB 16GB

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G Skill Intl F4-3000C14-16GVKD 16GB