G Skill Intl F2-5300CL4-1GBSA 1GB vs Crucial Technology BLS8G4D26BFSB.16FBR2 8GB

总分

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

总分

Crucial Technology BLS8G4D26BFSB.16FBR2 8GB

Crucial Technology BLS8G4D26BFSB.16FBR2 8GB

差异规格评论

差异

G Skill Intl F2-5300CL4-1GBSA 1GB

需要考虑的原因
G Skill Intl F2-5300CL4-1GBSA 1GB

报告一个错误

更快的读取速度，GB/s

4 17.5

测试中的平均数值

Crucial Technology BLS8G4D26BFSB.16FBR2 8GB

需要考虑的原因
Crucial Technology BLS8G4D26BFSB.16FBR2 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 52

左右 -136% 更低的延时
更快的写入速度，GB/s

11.6 1,479.2

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-5300CL4-1GBSA 1GB

Crucial Technology BLS8G4D26BFSB.16FBR2 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 22
读取速度，GB/s

4,226.4 17.5
写入速度，GB/s

1,479.2 11.6
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 4 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

590 2748

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Smart Modular SH564128FH8NZQNSCG 4GB

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Micron Technology 16ATF2G64HZ-2G1A1 16GB

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Samsung M386B4G70DM0-CMA4 32GB

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Super Talent F24EA8GS 8GB

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Crucial Technology CT25664AA800.M16FM 2GB

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Maxsun MSD44G24Q0 4GB

Maxsun MSD44G24Q0 4GB

SK Hynix HMT41GU7BFR8C-RD 8GB

SK Hynix HMT41GU7BFR8C-RD 8GB

G Skill Intl F4-2800C15-8GTZB 8GB

G Skill Intl F4-2800C15-8GTZB 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

AMD R744G2400U1S 4GB

AMD R744G2400U1S 4GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Corsair CMR64GX4M4C3333C16 16GB

Corsair CMR64GX4M4C3333C16 16GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Wilk Elektronik S.A. GR2400S464L17S/8G 8GB

Wilk Elektronik S.A. GR2400S464L17S/8G 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Kingston ACR32D4S2S8ME-16 16GB

Kingston ACR32D4S2S8ME-16 16GB