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G Skill Intl F2-5300CL4-1GBSA 1GB
SK Hynix GKE160SO102408-3000 16GB

G Skill Intl F2-5300CL4-1GBSA 1GB vs SK Hynix GKE160SO102408-3000 16GB

总分
star star star star star
G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

总分
star star star star star
SK Hynix GKE160SO102408-3000 16GB

SK Hynix GKE160SO102408-3000 16GB

差异 规格 评论

差异

G Skill Intl F2-5300CL4-1GBSA 1GB 需要考虑的原因
G Skill Intl F2-5300CL4-1GBSA 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 18.6
    测试中的平均数值
SK Hynix GKE160SO102408-3000 16GB 需要考虑的原因
SK Hynix GKE160SO102408-3000 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 52
    左右 -86% 更低的延时
  • 更快的写入速度，GB/s
    15.1 left arrow 1,479.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
G Skill Intl F2-5300CL4-1GBSA 1GB
SK Hynix GKE160SO102408-3000 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 28
  • 读取速度，GB/s
    4,226.4 left arrow 18.6
  • 写入速度，GB/s
    1,479.2 left arrow 15.1
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 4 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    590 left arrow 3552

G Skill Intl F2-5300CL4-1GBSA 1GB RAM的比较

G Skill Intl F2-5300PHU1-1GBSA 1GB
Crucial Technology CT8G4DFD824A.C16FHP 8GB

SK Hynix GKE160SO102408-3000 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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