G Skill Intl F2-8500CL5-2GBPI 2GB vs Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

总分

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

差异规格评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB

需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB

报告一个错误

更快的读取速度，GB/s

6 15.7

测试中的平均数值
更快的写入速度，GB/s

2,935.8 11.0

测试中的平均数值

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

报告一个错误

低于PassMark测试中的延时，ns

32 45

左右 -41% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-8500CL5-2GBPI 2GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

45 32
读取速度，GB/s

6,336.8 15.7
写入速度，GB/s

2,935.8 11.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 12 14 15
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1144 2528

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

Corsair CMD16GX3M4A2666C11 4GB

Corsair CMD16GX3M4A2666C11 4GB

A-DATA Technology DDR4 3200 2OZ 4GB

A-DATA Technology DDR4 3200 2OZ 4GB

A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB

G Skill Intl F4-3600C16-16GTZRC 16GB

G Skill Intl F4-3600C16-16GTZRC 16GB

SK Hynix HMT31GR7BFR4C-H9 8GB

SK Hynix HMT31GR7BFR4C-H9 8GB

Kingston MSI24D4S7D8MB-8 8GB

Kingston MSI24D4S7D8MB-8 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Corsair CMSX16GX4M2A2666C18 8GB

Corsair CMSX16GX4M2A2666C18 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Heoriady M471A1K43CB1-CTD 8GB

Heoriady M471A1K43CB1-CTD 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Crucial Technology CT8G4SFD824A.C16FBD2 8GB

Crucial Technology CT8G4SFD824A.C16FBD2 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-2933C16-8GTZRX 8GB

G Skill Intl F4-2933C16-8GTZRX 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Crucial Technology CT16G4DFD8266.M16FD 16GB

Crucial Technology CT16G4DFD8266.M16FD 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Avant Technology J642GU42J7240N4 16GB

Avant Technology J642GU42J7240N4 16GB

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

Crucial Technology BLS16G4D240FSE.16FBR 16GB

Crucial Technology BLS16G4D240FSE.16FBR 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Crucial Technology BL8G32C16U4BL.M8FE 8GB

Crucial Technology BL8G32C16U4BL.M8FE 8GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

Apacer Technology 78.CAGPP.ARW0B 8GB

Apacer Technology 78.CAGPP.ARW0B 8GB

Samsung M392B1K70DM0-YH9 8GB

Samsung M392B1K70DM0-YH9 8GB

Samsung M392B1K70CM0-YH9 8GB

Samsung M392B1K70CM0-YH9 8GB