Samsung M392B1K70DM0-YH9 8GB vs Samsung M392B1K70CM0-YH9 8GB

总分

Samsung M392B1K70DM0-YH9 8GB

Samsung M392B1K70DM0-YH9 8GB

总分

Samsung M392B1K70CM0-YH9 8GB

Samsung M392B1K70CM0-YH9 8GB

差异规格评论

差异

Samsung M392B1K70DM0-YH9 8GB

需要考虑的原因
Samsung M392B1K70DM0-YH9 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 40

左右 28% 更低的延时
更快的读取速度，GB/s

12.4 11

测试中的平均数值

Samsung M392B1K70CM0-YH9 8GB

需要考虑的原因
Samsung M392B1K70CM0-YH9 8GB

报告一个错误

更快的写入速度，GB/s

10.0 9.1

测试中的平均数值

规格

完整的技术规格清单

Samsung M392B1K70DM0-YH9 8GB

Samsung M392B1K70CM0-YH9 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

29 40
读取速度，GB/s

12.4 11.0
写入速度，GB/s

9.1 10.0
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2379 2493

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M392B1K70DM0-YH9 8GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Crucial Technology CT16G4DFD824A.C16FBD 16GB

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PNY Electronics PNY 2GB

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Corsair CMT32GX4M2C3200C14 16GB

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G Skill Intl F4-2400C15-4GNT 4GB

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SK Hynix HYMP164U64CP6-Y5 512MB

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G Skill Intl F4-3200C18-8GRS 8GB

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Kingston 9965669-018.A00G 16GB

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Kingston 9965525-140.A00LF 8GB

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Samsung M471A5244CB0-CTD 4GB

Kingston 9905403-515.A00LF 8GB

Kingston 9905403-515.A00LF 8GB

G Skill Intl F4-3466C16-16GTZ 16GB

G Skill Intl F4-3466C16-16GTZ 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

G Skill Intl F4-3200C15-16GVR 16GB

G Skill Intl F4-3200C15-16GVR 16GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Corsair CM4X8GF2666C16K4 8GB

Corsair CM4X8GF2666C16K4 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9965662-004.A00G 16GB

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