RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F2-8500CL5-2GBPI 2GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB
比较
G Skill Intl F2-8500CL5-2GBPI 2GB vs Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB
总分
G Skill Intl F2-8500CL5-2GBPI 2GB
总分
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB
报告一个错误
更快的读取速度,GB/s
6
19.1
测试中的平均数值
更快的写入速度,GB/s
2,935.8
16.2
测试中的平均数值
需要考虑的原因
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
45
左右 -67% 更低的延时
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
G Skill Intl F2-8500CL5-2GBPI 2GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
45
27
读取速度,GB/s
6,336.8
19.1
写入速度,GB/s
2,935.8
16.2
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1144
3784
G Skill Intl F2-8500CL5-2GBPI 2GB RAM的比较
OCZ OCZ2T8001G 1GB
Micron Technology 9HTF6472FY-667B4D3 512MB
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB RAM的比较
G Skill Intl F5-6000J3636F16G 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M378B5773DH0-CH9 2GB
Apacer Technology 78.C1GMS.C7Z0C 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600
Samsung M393B2G70BH0-CK0 16GB
Essencore Limited KD44GU480-26N160T 4GB
SK Hynix HYMP112U64CP8-S6 1GB
Crucial Technology BLS16G4S240FSD.16FD 16GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Hewlett-Packard 7EH67AA# 8GB
Corsair CMK32GX5M2B5600C36 16GB
Corsair CMR16GX4M2Z3200C16 8GB
Kingston 9905458-017.A01LF 4GB
Kingston 9965596-036.B00G 8GB
Kingston ACR16D3LS1NGG/2G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology BL16G36C16U4B.M16FE1 16GB
Samsung M471A1G44AB0-CWE 8GB
Kingston 9965669-018.A00G 16GB
Samsung M378A2K43EB1-CWE 16GB
Samsung M378A4G43AB2-CWE 32GB
A-DATA Technology VDQVE1B16 2GB
Samsung M391A1G43DB0-CPB 8GB
AMD R748G2133U2S 8GB
Corsair CMW32GX4M2Z2933C16 16GB
Kingston HP698651-154-MCN 8GB
Crucial Technology CT16G4SFS832A.C8FB 16GB
报告一个错误
×
Bug description
Source link