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G Skill Intl F5-6000J3636F16G 16GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

G Skill Intl F5-6000J3636F16G 16GB vs Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

总分
star star star star star
G Skill Intl F5-6000J3636F16G 16GB

G Skill Intl F5-6000J3636F16G 16GB

总分
star star star star star
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

差异 规格 评论

差异

G Skill Intl F5-6000J3636F16G 16GB 需要考虑的原因
G Skill Intl F5-6000J3636F16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 27
    左右 19% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13% 更高的带宽
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB 需要考虑的原因
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB
报告一个错误
  • 更快的读取速度，GB/s
    19.1 left arrow 14.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.2 left arrow 13.4
    测试中的平均数值

规格

完整的技术规格清单
G Skill Intl F5-6000J3636F16G 16GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB
主要特点
  • 存储器类型
    DDR5 left arrow DDR4
  • PassMark中的延时，ns
    22 left arrow 27
  • 读取速度，GB/s
    14.4 left arrow 19.1
  • 写入速度，GB/s
    13.4 left arrow 16.2
  • 内存带宽，mbps
    19200 left arrow 17000
Other
  • 描述
    PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    no data / 2400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3671 left arrow 3784

G Skill Intl F5-6000J3636F16G 16GB RAM的比较

Apacer Technology 76.D105G.D090B 16GB
Kingston 9905783-025.A01G 16GB

Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB RAM的比较

G Skill Intl F2-8500CL5-2GBPI 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

G Skill Intl F5-6000J3636F16G 16GB
G Skill Intl F5-6000J3636F16G 16GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK8GX4M2B4200C19 4GB
Corsair CMK8GX4M2B4200C19 4GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston 9905630-052.A00G 16GB
Kingston 9905630-052.A00G 16GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Micron Technology 16ATF2G64HZ-2G1A1 16GB
Micron Technology 16ATF2G64HZ-2G1A1 16GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Kingmax Semiconductor GSAF62F-D8---------- 4GB
Kingmax Semiconductor GSAF62F-D8---------- 4GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Kingston KHX3466C16D4/16GX 16GB
Kingston KHX3466C16D4/16GX 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Neo Forza NMUD480E86-3200 8GB
Neo Forza NMUD480E86-3200 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Corsair CMW64GX4M8A2666C16 8GB
Corsair CMW64GX4M8A2666C16 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
INTENSO 5641162 8GB
INTENSO 5641162 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378A5143TB2-CTD 4GB
Samsung M378A5143TB2-CTD 4GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston ACR26D4S9S1KA-4 4GB
Kingston ACR26D4S9S1KA-4 4GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Avant Technology W641GU42J5213N3 8GB
Avant Technology W641GU42J5213N3 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Kingston K000MD44U 4GB
Kingston K000MD44U 4GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Kingmax Semiconductor GLLH23F-18KIIP------ 16GB
Kingmax Semiconductor GLLH23F-18KIIP------ 16GB
内存RAM