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G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMK16GX4M2K3600C19 8GB
比较
G Skill Intl F2-8500CL5-2GBPI 2GB vs Corsair CMK16GX4M2K3600C19 8GB
总分
G Skill Intl F2-8500CL5-2GBPI 2GB
总分
Corsair CMK16GX4M2K3600C19 8GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB
报告一个错误
更快的读取速度,GB/s
6
17
测试中的平均数值
更快的写入速度,GB/s
2,935.8
13.6
测试中的平均数值
需要考虑的原因
Corsair CMK16GX4M2K3600C19 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
45
左右 -55% 更低的延时
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMK16GX4M2K3600C19 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
45
29
读取速度,GB/s
6,336.8
17.0
写入速度,GB/s
2,935.8
13.6
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1144
3408
G Skill Intl F2-8500CL5-2GBPI 2GB RAM的比较
OCZ OCZ2T8001G 1GB
Micron Technology 9HTF6472FY-667B4D3 512MB
Corsair CMK16GX4M2K3600C19 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-4000C14-8GTZR 8GB
Crucial Technology CT25664AA800.M16FM 2GB
Kingston KF2933C17S4/16G 16GB
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology BL16G32C16S4B.8FB 16GB
SK Hynix HMA451U6AFR8N-TF 4GB
G Skill Intl F4-3600C18-8GTZR 8GB
SK Hynix HYMP125U64CP8-S6 2GB
Crucial Technology CT8G4SFS8266.M8FE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Maxsun MSD44G24Q0 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology CT16G4SFS8266.C8FB 16GB
Kingston 9965525-155.A00LF 8GB
Gloway International (HK) STK2133C15-8GB 8GB
SK Hynix HMT351S6CFR8C-PB 4GB
Crucial Technology BLS16G4D240FSE.16FD 16GB
Samsung M393B2G70BH0-CH9 16GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
Samsung M378B5673EH1-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M471B5273DH0-CH9 4GB
Kingston 9905624-046.A00G 8GB
SK Hynix HYMP112U64CP8-Y5 1GB
Kingston 9905622-055.A00G 4GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Hewlett-Packard 7EH68AA# 16GB
报告一个错误
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Bug description
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