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G Skill Intl F2-8500CL5-2GBPI 2GB
Essencore Limited KD4AGS88C-26N1900 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB vs Essencore Limited KD4AGS88C-26N1900 16GB

总分
star star star star star
G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分
star star star star star
Essencore Limited KD4AGS88C-26N1900 16GB

Essencore Limited KD4AGS88C-26N1900 16GB

差异 规格 评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB 需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB
报告一个错误
  • 更快的读取速度，GB/s
    6 left arrow 15.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,935.8 left arrow 13.2
    测试中的平均数值
Essencore Limited KD4AGS88C-26N1900 16GB 需要考虑的原因
Essencore Limited KD4AGS88C-26N1900 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 45
    左右 -25% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
G Skill Intl F2-8500CL5-2GBPI 2GB
Essencore Limited KD4AGS88C-26N1900 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 36
  • 读取速度，GB/s
    6,336.8 left arrow 15.8
  • 写入速度，GB/s
    2,935.8 left arrow 13.2
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1144 left arrow 3027

G Skill Intl F2-8500CL5-2GBPI 2GB RAM的比较

OCZ OCZ2T8001G 1GB
Micron Technology 9HTF6472FY-667B4D3 512MB

Essencore Limited KD4AGS88C-26N1900 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Essencore Limited KD4AGS88C-26N1900 16GB
Essencore Limited KD4AGS88C-26N1900 16GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Golden Empire CL15-17-17 D4-3200 8GB
Golden Empire CL15-17-17 D4-3200 8GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
Crucial Technology CT4G4DFS8266.C8FB 4GB
Crucial Technology CT4G4DFS8266.C8FB 4GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Corsair CMSX64GX4M2A2666C18 32GB
Corsair CMSX64GX4M2A2666C18 32GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
InnoDisk Corporation M4S0-AGS1O5IK 16GB
InnoDisk Corporation M4S0-AGS1O5IK 16GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
内存RAM
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT32G4SFD832A.C16FE 32GB
Crucial Technology CT32G4SFD832A.C16FE 32GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
SK Hynix HMA82GS6DJR8N-VK 16GB
SK Hynix HMA82GS6DJR8N-VK 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology CT16G4DFRA32A.M16FR 16GB
Crucial Technology CT16G4DFRA32A.M16FR 16GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
SK Hynix HMA81GU6DJR8N-XN 8GB
SK Hynix HMA81GU6DJR8N-XN 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston 9905665-021.A00G 4GB
Kingston 9905665-021.A00G 4GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMU32GX4M4C3200C16 8GB
Corsair CMU32GX4M4C3200C16 8GB
内存RAM
Samsung M471A2G43BB2-CWE 16GB
Samsung M471A2G43BB2-CWE 16GB
Samsung M471A1G44BB0-CWE 8GB
Samsung M471A1G44BB0-CWE 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Transcend Information TS2GLH64V4B 16GB
Transcend Information TS2GLH64V4B 16GB
内存RAM