Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Crucial Technology CT16G4DFRA32A.M16FR 16GB

总分

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

总分

Crucial Technology CT16G4DFRA32A.M16FR 16GB

Crucial Technology CT16G4DFRA32A.M16FR 16GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BN-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 18.4

测试中的平均数值

Crucial Technology CT16G4DFRA32A.M16FR 16GB

需要考虑的原因
Crucial Technology CT16G4DFRA32A.M16FR 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 72

左右 -132% 更低的延时
更快的写入速度，GB/s

15.1 1,938.7

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Crucial Technology CT16G4DFRA32A.M16FR 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

72 31
读取速度，GB/s

4,241.0 18.4
写入速度，GB/s

1,938.7 15.1
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

677 3560

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Solarflare Communications CT16G4DFD824A.C16FBR 16GB

Solarflare Communications CT16G4DFD824A.C16FBR 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

SK Hynix V-GeN D4H4GL30A8TX5 4GB

SK Hynix V-GeN D4H4GL30A8TX5 4GB

Samsung M393B5170FH0-CK0 4GB

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Essencore Limited IM44GU48N26-GIIHA0 4GB

Essencore Limited IM44GU48N26-GIIHA0 4GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology CT4G4DFS8213.C8FBD2 4GB

Crucial Technology CT4G4DFS8213.C8FBD2 4GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Micron Technology 8ATF1G64HZ-2G6E3 8GB

Micron Technology 8ATF1G64HZ-2G6E3 8GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Corsair CMK16GX4M2Z3200C16 8GB

Corsair CMK16GX4M2Z3200C16 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Corsair CM4B8G4J2400A16K2-ON 8GB

Corsair CM4B8G4J2400A16K2-ON 8GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Crucial Technology BL16G32C16U4B.M16FE 16GB

Crucial Technology BL16G32C16U4B.M16FE 16GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Crucial Technology CT8G4DFS824A.C8FBR1 8GB

Crucial Technology CT8G4DFS824A.C8FBR1 8GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

G Skill Intl F4-2133C15-8GRR 8GB

G Skill Intl F4-2133C15-8GRR 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Ramaxel Technology RMSA3320MJ78HAF-3200 8GB

Ramaxel Technology RMSA3320MJ78HAF-3200 8GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Crucial Technology CT8G4DFS824A.M8FR 8GB

Crucial Technology CT8G4DFS824A.M8FR 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Golden Empire CL18-20-20 D4-3200 8GB

Golden Empire CL18-20-20 D4-3200 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Corsair CMR32GX4M4C3200C16 8GB

Corsair CMR32GX4M4C3200C16 8GB